Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2732826
Reference16 articles.
1. Substrates for gallium nitride epitaxy
2. Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
3. Anti-Surfactant in III-Nitride Epitaxy -- Quantum Dot Formation and Dislocation Termination --
4. A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
5. Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy
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