Stress‐enhanced carrier mobility in zone melting recrystallized polycrystalline Si films on SiO2‐coated substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93077
Reference6 articles.
1. n‐channel deep‐depletion metal‐oxide‐semiconductor field‐effect transistors fabricated in zone‐melting‐recrystallized polycrystalline Si films on SiO2
2. MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
3. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
4. Elastoresistance of n‐type silicon on sapphire
5. Mechanical and electrical properties of epitaxial silicon films on spinel
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