Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118271
Reference15 articles.
1. Fermi Level Position at Metal-Semiconductor Interfaces
2. Capacitance‐Voltage Characteristics of Metal Barriers onpPbTe andpInAs: Effects of the Inversion Layer
3. Schottky barrier height of n‐InxGa1−xAs diodes
4. Fermi level pinning and chemical interactions at metal–InxGa1−xAs(100) interfaces
5. Observation of Interface Band Structure by Ballistic-Electron-Emission Microscopy
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