Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710340
Reference32 articles.
1. Magnetic measurements on the layered III–VI diluted magnetic semiconductor Ga1−xMnxS
2. Calculation of the magnetization of the layered III-VI diluted magnetic semiconductorGa1−xMnxS
3. Explorations of the magnetization of Ga1−xMnxS over a wide range of concentrations, 0.008
4. Anisotropic magnetization of the III-VI diluted magnetic semiconductorIn1−xMnxSin the mixed state
5. The singlet model of the anisotropic magnetization of the III-VI diluted magnetic semiconductor, In1−xMnxS
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1. Exploring the critical behavior of the anomalous spin-glass transition in Ga1−xMnxS;AIP Advances;2024-02-01
2. Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe;AIP Advances;2016-05
3. Ga1-xMnxS: phase transitions;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011
4. Spin-glass ordering in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS;Journal of Applied Physics;2010-05
5. Theoretical model for the experimental magnetization data from the layered III-VI diluted magnetic semiconductor In1-xMnxSe (x=0.014 & 0.027);Journal of Applied Physics;2009-04
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