Calculation of the magnetization of the layered III-VI diluted magnetic semiconductorGa1−xMnxS
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.195211/fulltext
Reference21 articles.
1. Magnetic measurements on the layered III–VI diluted magnetic semiconductor Ga1−xMnxS
2. Magnetic measurements on the III-VI diluted magnetic semiconductor Ga1−xMnxSe
3. Magnetic measurements on the layered III–VI diluted magnetic semiconductor Ga1−xFexSe
4. Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe: Role of the electronic contribution
5. Thermal conductivity of gallium sulfide
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1. Exploring the critical behavior of the anomalous spin-glass transition in Ga1−xMnxS;AIP Advances;2024-02-01
2. ICMMS-2: Influence of Gamma Radiation on Nonlinear Optical, Semiconducting and Dielectrical Properties of In0.95Mn0.05Se Thin Films;Egyptian Journal of Chemistry;2021-01-15
3. Tunable Non-linear Optical, Semiconducting and Dielectric Properties of In1−xMnxSe Thin Films;Journal of Electronic Materials;2019-06-03
4. Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe;AIP Advances;2016-05
5. Structure, optical and transport measurements on bulk magnetic semiconductor In1−xMnxSe;Indian Journal of Physics;2016-01-28
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