Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1600825
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3. InP quantum dots for dislocation-tolerant, visible light emitters on Si;Applied Physics Letters;2020-11-02
4. Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy;Microelectronic Engineering;2013-12
5. The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys;The Canadian Journal of Chemical Engineering;2012-02-13
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