Improved size homogeneity of InP-on-GaInP Stranski-Krastanow islands by growth on a thin GaP interface layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Effect of strain on surface morphology in highly strained InGaAs films
5. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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1. Two-step photon absorption in InP/InGaP quantum dot solar cells;Applied Physics Letters;2018-07-23
2. Effect of Optical Gain Broadening on the Dynamic Characteristics of InGaAs/GaAs Quantum Dot Laser Based on a Multi-Population Rate Equations Model;Journal of Nanoelectronics and Optoelectronics;2017-03-01
3. Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy;Microelectronic Engineering;2013-12
4. Growth of InP self-assembled quantum dots on strained and strain-relaxed Inx(Al0.6Ga0.4)1−xP matrices by metal-organic chemical vapor deposition;Journal of Applied Physics;2006-08-15
5. Shape transition during epitaxial growth ofInAsquantum dots onGaAs(001): Theory and experiment;Physical Review B;2006-05-31
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