Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence-Reference-Cited by-同舟云学术

Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence

Published:2002-05-27 Issue:21 Volume:80 Page:3898-3900
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Krishna S.,Raghavan S.,Gray A. L.,Stintz A.,Malloy K. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1482421

Reference17 articles.

1. Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

2. Intermixing induced changes in the radiative emission from III–V quantum dots

3. Selective control of self-organized In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dot properties: Quantum dot intermixing

4. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

5. Thermal annealing effect on the intersublevel transitions in InAs quantum dots

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