Stress analysis of selective epitaxial growth of GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124082
Reference12 articles.
1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
2. Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas
3. Photoassisted dry etching of GaN
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth
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