Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth-Reference-Cited by-同舟云学术

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Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth

Published:1998-10-19 Issue:16 Volume:73 Page:2242-2244
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bidnyk S.,Little B. D.,Cho Y. H.,Krasinski J.,Song J. J.,Yang W.,McPherson S. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.121689

Reference13 articles.

1. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells

2. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

4. Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

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