Annealing of Si‐implanted GaAs studied using variable‐energy positrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351650
Reference27 articles.
1. Interaction of positron beams with surfaces, thin films, and interfaces
2. Ion implantation for isolation of III-V semiconductors
3. Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron
4. Depth profiles of vacancy‐type defect in Si+‐implanted GaAs resulting from rapid thermal annealing
5. Vacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique;Applied Physics A;2004-12
2. Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs;Journal of Applied Physics;2000-01-15
3. Applying slow positrons to the study of ion implantation induced defects in GaAs;Materials Science and Engineering: B;1999-12
4. A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs;Semiconductor Science and Technology;1998-11-01
5. Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions;Applied Physics A: Materials Science & Processing;1997-09-01
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