Boron segregation at Si‐SiO2interface during neutral anneals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333318
Reference13 articles.
1. Diffusion of Boron from Implanted Sources under Oxidizing Conditions
2. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation
3. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation
4. Topology of Silicon Structures with Recessed SiO2
5. Framed Recessed Oxide Scheme for Dislocation‐Free Planar Si Structures
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3. Self-aligned doping profiles in nanoscale silicon structures;Physica E: Low-dimensional Systems and Nanostructures;2006-05
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