Current‐voltage characteristics of metalorganic chemical vapor deposition InP/InGaAsp‐i‐nphotodiodes: The influence of finite dimensions and heterointerfaces-Reference-Cited by-同舟云学术

Current‐voltage characteristics of metalorganic chemical vapor deposition InP/InGaAsp‐i‐nphotodiodes: The influence of finite dimensions and heterointerfaces

Published:1988-12 Issue:11 Volume:64 Page:6552-6561
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zemel A.,Gallant M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342026

Reference13 articles.

1. Ultimate low-loss single-mode fibre at 1.55 μm

2. Fully ion‐implantedp+‐ngermanium avalanche photodiodes

3. PINFET hybrid optical receivers for 1.2 Gbit/s transmission systems operating at 1.3 and 1.55 μm wavelength

4. Low-noise 8 GHz PIN/FET optical receiver

5. Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodes

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