Fully ion‐implantedp+‐ngermanium avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92385
Reference8 articles.
1. Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm
2. Avalanche Breakdown in Germanium
3. Crystal orientation dependence of ionization rates in germanium
4. Shallow‐junctionp+‐ngermanium avalanche photodiodes (APD’s)
5. Ann+‐n‐pgermanium avalanche photodiode
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