Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy-Reference-Cited by-同舟云学术

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Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy

Published:2015-04-27 Issue:17 Volume:106 Page:173105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang L. B.¹^ORCID,Guo J. K.¹,Kang N.¹,Pan Dong²,Li Sen¹,Fan Dingxun¹,Zhao Jianhua²,Xu H. Q.¹³

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Division of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

Funder

National Basic Research Program of China

Ph.D.Program Foundation of the Ministry of Education of China

National Natural Science Foundation of China (NSFC)

Swedish Research Council Formas (Svenska Forskningsrådet Formas)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919390

Reference25 articles.

1. Nanowire-based one-dimensional electronics

2. Spin–orbit qubit in a semiconductor nanowire

3. Field Tuning thegFactor in InAs Nanowire Double Quantum Dots

4. Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

5. Disordered electronic systems

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