Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing-Reference-Cited by-同舟云学术

Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing

Published:2020-05-29 Issue:20 Volume:127 Page:203302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kameda Asaki¹^ORCID,Mizukawa Yuri¹,Hanafusa Hiroaki¹^ORCID,Higashi Seiichiro¹²

Affiliation:

1. Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

2. Reserarch Institute for Nanodevice and Bio Systems (RNBS), Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143834

Reference44 articles.

1. Temperature dependence of the growth rate for nanocrystalline diamond films deposited from an Ar/CH4 microwave plasma

2. Surface hydride composition of plasma deposited hydrogenated amorphous silicon: in situ infrared study of ion flux and temperature dependence

3. Temperature dependence of SiO2 film growth with plasma-enhanced atomic layer deposition

4. Reactive ion etching for microelectrical mechanical system fabrication

5. Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4

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