Homogenization theory for the cumulative effect of Te inclusions in CdZnTe radiation detectors

Author:

Bale Derek S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference21 articles.

1. Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe

2. Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications

3. Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications

4. J. R. Heffelfinger, D. L. Medlin, and R. B. James, in Semiconductors for Room Temperature Radiation Detector Applications II, edited by R. B. James, T. E. Schlesinger, P. Siffert, W. Dusi, M. R. Squillante, M. O’Connell, and M. Cuzin (Materials Research Society, Pittsburgh, 1998), Vol. 487, p. 33.

5. Effect of Te precipitates on the performance of CdZnTe detectors

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2. Shallow impurity levels in CdZnTe probed by magneto-photoluminescence;J INFRARED MILLIM W;2017

3. Annealing effects on Cd0.96Zn0.04Te crystals with Te inclusions probed by photoluminescence spectroscopy;physica status solidi (b);2016-04-05

4. Study on Te inclusions distributions of different solid–liquid interface shapes within CdZnTe crystals;Materials Science in Semiconductor Processing;2015-12

5. Barrier controlled carrier trapping of extended defects in CdZnTe detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-09

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