Annealing effects on Cd0.96Zn0.04Te crystals with Te inclusions probed by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Annealing effects on Cd0.96Zn0.04Te crystals with Te inclusions probed by photoluminescence spectroscopy

Published:2016-04-05 Issue:8 Volume:253 Page:1612-1615
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Qi Zhen¹,Sheng Fengfeng²,Zhu Liang¹,Chen Xiren¹,Zhu Liangqing¹³,Zha Fangxing⁴,Yang Jianrong²,Shao Jun¹

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences; 200083 Shanghai P.R. China

2. Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences; 200083 Shanghai P.R. China

3. Key Laboratory of Polar materials and Devices, Ministry of Education, East China Normal University; 200062 Shanghai P.R. China

4. Physics Department, Shanghai University; 200444 Shanghai P.R. China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Zn concentration determination in CdZnTe by NIR spectroscopy

2. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

3. Influence of Surface Polishing on the Structural and Electronic Properties of CdZnTe Surfaces

4. Temperature-gradient annealing of CdZnTe under Te overpressure

5. Homogenization theory for the cumulative effect of Te inclusions in CdZnTe radiation detectors

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