HOT ELECTRON RELAXATION TIMES IN TWO‐VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK‐MICROWAVE OSCILLATORS-Reference-Cited by-同舟云学术

HOT ELECTRON RELAXATION TIMES IN TWO‐VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK‐MICROWAVE OSCILLATORS

Published:1967-12-15 Issue:12 Volume:11 Page:386-388
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Das P.,Bharat R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1728223

Reference4 articles.

1. A study of energy-loss processes in germanium at high electric fields using microwave techniques

2. Upper frequency limit for Gunn oscillators imposed by carrier energy-relaxation time

3. “Special issue on Semiconductor Bulk‐effect and Transmit Time Devices,” IEEE Transactions on Electron Devices ED‐13, No. 1, (1966). This issue has many articles and back references.IETDAI0018-9383

4. The intervalley transfer mechanism of negative resistivity in bulk semiconductors

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