Terahertz power dissipation spectra of electrons in bulk GaAs under high electric fields at low temperature
-
Published:2009
Issue:4
Volume:58
Page:2692
-
ISSN:1000-3290
-
Container-title:Acta Physica Sinica
-
language:
-
Short-container-title:Acta Phys. Sin.
Author:
Zhu Yi-Ming ,Kaz Hirakawa ,Chen Lin ,He Bo-Yong ,Huang Yuan-Shen ,Jia Xiao-Xuan ,Zhang Da-Wei ,Zhuang Song-Lin ,
Abstract
By using the freespace terahertz (THz) electrooptic (EO) sampling technique, the THz electromagnetic wave waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser pulses under strong bias electric fields up to 300 kV/cm were recorded. From the experimental data, we can clearly see the THz electromagnetic wave emission waveforms, ETHz(t), which are proportional to the acceleration/deceleration of electrons, have a bipolar feature. Power dissipation spectra of electrons for stepfunctionlike input electric fields have been obtained by calculating Fourier spectra of the measured THz traces. The cutoff frequency, νc, for negative power dissipation (i.e., gain) due to intervalley transfer is found to gradually increase with increasing bias electric fields, F0, for F0 < 50 kV/cm and saturate at 750 GHz above ~50 kV/cm at 10 K.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献