Arsenic uphill diffusion during shallow junction formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2200587
Reference30 articles.
1. Interface induced uphill diffusion of boron: an effective approach for ultrashallow junction
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3. Boron uphill diffusion during ultrashallow junction formation
4. Effect of near-surface band bending on dopant profiles in ion-implanted silicon
5. Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
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