Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates-Reference-Cited by-同舟云学术

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Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Published:2011-10-24 Issue:17 Volume:99 Page:171903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu X.,Smith D. J.,Fan J.,Zhang Y.-H.,Cao H.,Chen Y. P.,Leiner J.,Kirby B. J.,Dobrowolska M.,Furdyna J. K.

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3655995

Reference12 articles.

1. Colloquium: Topological insulators

2. Topological states of quantum matter

3. Molecular Beam Epitaxial Growth of Topological Insulators

4. MBE growth optimization of topological insulator Bi2Te3 films

5. Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

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