Preparation of Bi2Se3 topological insulator nanowires via topochemical transformation and their potential in anisotropic optical and optoelectronic applications

Author:

Yi Huaxin1,Ma Churong2,Ma Yuhang1,Xu Shuhua1ORCID,Tao Meilin1ORCID,Guan Xinyi1ORCID,Wang Wan1,Liang Huanrong1,Zheng Zhaoqiang3,Zou Yichao1,Yao Jiandong1ORCID,Yang Guowei1ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University 1 , Guangzhou, 510275 Guangdong, People's Republic of China

2. Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University 2 , Guangzhou, 511443 Guangdong, China

3. School of Materials and Energy, Guangdong University of Technology 3 , Guangzhou, 510006 Guangdong, People's Republic of China

Abstract

Herein, a facile, catalyst-free, and dry topochemical transformation strategy for transforming the Bi2S3 nanowires to the Bi2Se3 nanowires, which has been realized through an atmospheric pressure high-temperature selenization treatment, has been developed. The complete topochemical transformation has been verified by combining x-ray diffraction, Raman spectroscopy, energy dispersive spectrometer, x-ray photoelectron spectroscopy, transmission electron microscopy, and selected area electron diffraction measurements. Systematical optical characterizations, including polarization-resolved optical microscopy images and polarization-dependent Raman spectra, have revealed the strong anisotropy of the Bi2Se3 nanowires. Furthermore, finite-different time-domain simulations have consolidated that the Bi2Se3 nanowires possess highly anisotropic absorption cross sections across the ultraviolet to far infrared spectral range, laying a solid foundation for the realization of ultra-broadband polarized optoelectronic applications. On the whole, this pioneering study depicts a unique avenue for topological material design accompanied with the integration of additional functionalities beyond the intrinsic counterparts, opening up an attractive research field for polarized photonics and optoelectronics.

Funder

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Scientific and Technological Planning Project of Guangzhou City

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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