Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels-Reference-Cited by-同舟云学术

Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels

Published:2012-02-27 Issue:9 Volume:100 Page:093501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liao Ta-Chuan,Kang Tsung-Kuei,Lin Chia-Min,Wu Chun-Yu,Cheng Huang-Chung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3691184

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3. Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels

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