Interface states characterization by conductance measurements of Au/Cr Schottky barriers to sulfur‐treated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356313
Reference30 articles.
1. Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide
2. Electrical properties of the gallium arsenide–insulator interface
3. Perspectives on III–V compound MIS structures
4. GaAs metallization: Some problems and trends
5. Interfacial constraints on device performance
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