An improved impact‐ionization model for high‐energy electron transport in Si with Monte Carlo simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348711
Reference23 articles.
1. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
2. A many-band silicon model for hot-electron transport at high energies
3. Ionization Rates of Holes and Electrons in Silicon
4. Measurement of the ionization rates in diffused silicon p-n junctions
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