Silicon-nitride photonic circuits interfaced with monolayer MoS2-Reference-Cited by-同舟云学术

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Silicon-nitride photonic circuits interfaced with monolayer MoS2

Published:2015-08-31 Issue:9 Volume:107 Page:091112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wei Guohua¹,Stanev Teodor K.²,Czaplewski David A.³,Jung Il Woong³,Stern Nathaniel P.¹²^ORCID

Affiliation:

1. Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA

2. Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA

3. Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439, USA

Funder

Argonne National Laboratory

Institute for Sustainability and Energy at Northwestern

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4929779

Reference27 articles.

1. A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

2. A graphene-based broadband optical modulator

3. High-responsivity graphene/silicon-heterostructure waveguide photodetectors

4. Chip-integrated ultrafast graphene photodetector with high responsivity

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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