High‐power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

Author:

Tihanyi P.,Wagner D. K.,Roza A. J.,Vollmer H. J.,Harding C. M.,Davis R. J.,Wolf E. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05

2. Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Using Chlorine Ions;Japanese Journal of Applied Physics;1996-07-15

3. FULL-WAFER TECHNOLOGY FOR LARGE-SCALE LASER FABRICATION AND INTEGRATION;Integrated Optoelectronics;1995

4. Self-aligned dry-etching process for waveguide diode ring lasers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09

5. Self-aligned fabrication of arrays of back-to-back external 45° reflectors integrated with ridge-waveguide lasers for surface-emitting high-power semiconductor laser sources in AlGaAs/GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11

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