Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126220
Reference17 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
3. Quantum‐well infrared photodetectors
4. Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors
5. Intersubband absorption in the conduction band of Si/Si1−xGexmultiple quantum wells
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1. Capacitance spectroscopy of InAs quantum dots inserted in an AlGaAs/GaAs HEMT for photodetector applications;AIP Advances;2023-10-01
2. Вплив термічної активації носіїв заряду на температурні залежності темнового струму, фотопровідність та фотолюмінесценцію гетероструктур In0,4Ga0,6As/GaAs з квантовими точками;Ukrainian Journal of Physics;2022-02-14
3. 10.15407/ujpe56.4;Ukrainian Journal of Physics;2022-02-14
4. Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultrafast carrier relaxation;Physica E: Low-dimensional Systems and Nanostructures;2021-02
5. The effects of close packing and electric fields on the optical properties of three-dimensionally stacked quantum dots;Journal of Computational Electronics;2019-11-16
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