Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor-Reference-Cited by-同舟云学术

Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor

Published:2010-11-08 Issue:19 Volume:97 Page:193504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kwon Dae Woong,Kim Jang Hyun,Chang Ji Soo,Kim Sang Wan,Sun Min-Chul,Kim Garam,Kim Hyun Woo,Park Jae Chul,Song Ihun,Kim Chang Jung,Jung U In,Park Byung-Gook

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3508955

Reference15 articles.

1. A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode

2. Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering

3. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

4. Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

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