Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties-Reference-Cited by-同舟云学术

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Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

Published:2015-03-23 Issue:12 Volume:106 Page:122902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yokoyama Masafumi¹²,Yokoyama Haruki³,Takenaka Mitsuru¹²,Takagi Shinichi¹²

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032, Japan

2. JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032, Japan

3. NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198, Japan

Funder

New Energy and Industrial Technology Development Organisation (NEDO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914453

Reference25 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Nanometre-scale electronics with III–V compound semiconductors

3. High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

4. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

5. Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

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1. Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice;Applied Physics Letters;2024-06-17

2. Properties and modification of native oxides of InP(100);Journal of Physics D: Applied Physics;2022-12-13

3. Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures;Japanese Journal of Applied Physics;2022-05-25

4. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si;ACS Applied Electronic Materials;2022-01-10

5. Mg:TiO2 alloy thin films based MOS capacitors grown on GaAs substrates;Journal of Alloys and Compounds;2021-07

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