Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam-Reference-Cited by-同舟云学术

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Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Published:2014-08-04 Issue:5 Volume:105 Page:052108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uedono Akira,Fujishima Tatsuya,Piedra Daniel,Yoshihara Nakaaki,Ishibashi Shoji,Sumiya Masatomo,Laboutin Oleg,Johnson Wayne,Palacios Tomás

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892834

Reference10 articles.

1. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

2. Gallium nitride devices for power electronic applications

3. Degradation Mechanisms for GaN and GaAs High Speed Transistors

4. Defect identification in semiconductors with positron annihilation: Experiment and theory

5. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam;Journal of Applied Physics;2023-06-08

2. Photoluminescence and Interference of Anodic Aluminum Oxide Films;2023

3. Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals;Crystals;2022-08-09

4. Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures;Physical Review Applied;2020-04-13

5. Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD;The Journal of Physical Chemistry C;2019-03-22

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