Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126514
Reference9 articles.
1. Electron emission properties of crystalline diamond and III-nitride surfaces
2. Fabrication of GaN field emitter arrays by selective area growth technique
3. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
4. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
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1. Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance;ECS Journal of Solid State Science and Technology;2022-11-01
2. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC;Chemical Physics Letters;2016-05
3. Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01
4. GaN Based Quantum Cathodes;Vacuum Nanoelectronic Devices;2015-07-23
5. Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals;Scientific Reports;2015-05-15
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