Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

Author:

Kasu Makoto,Kobayashi Naoki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance;ECS Journal of Solid State Science and Technology;2022-11-01

2. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC;Chemical Physics Letters;2016-05

3. Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01

4. GaN Based Quantum Cathodes;Vacuum Nanoelectronic Devices;2015-07-23

5. Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals;Scientific Reports;2015-05-15

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