Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC-Reference-Cited by-同舟云学术

Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

Published:2016-05 Issue: Volume:651 Page:76-79
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Liang F.,Chen P.^ORCID,Zhao D.G.,Jiang D.S.,Liu Z.S.,Zhu J.J.,Yang J.,Liu W.,He X.G.,Li X.J.,Li X.,Liu S.T.,Yang H.,Zhang L.Q.,Liu J.P.,Zhang Y.T.,Du G.T.

Funder

National Natural Science Foundation of China

One Hundred Person Project of the Chinese Academy of Sciences

Basic Research Project of Jiangsu Province

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference30 articles.

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3. High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

4. High performance AlGaN/GaN HEMTs with AlN/SiNxpassivation

5. Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

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1. Thermionic emission and conversion properties of n-type AlGaN thin film cathodes grown on 6H–SiC substrates;Japanese Journal of Applied Physics;2020-02-03

2. Surface Electronic Properties of Si‐Doped AlGaN and Thermionic Emission Characteristics with Adsorption of Alkali Metal Atoms;physica status solidi (a);2019-11-25

3. Preparations and field emission properties of multilayer AlGaN nanofilm;Acta Physica Sinica;2016