THz photomixers based on nitrogen-ion-implanted GaAs-Reference-Cited by-同舟云学术

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THz photomixers based on nitrogen-ion-implanted GaAs

Published:2015-11-14 Issue:18 Volume:118 Page:183102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peytavit E.¹,Billet M.¹,Desmet Y.¹,Ducournau G.¹,Yarekha D.¹,Lampin J-F.¹

Affiliation:

1. Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS/Université de Lille, Avenue Poincaré, CS 60069, 59652 Villeneuve d'Ascq, France

Funder

French National Research Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935520

Reference17 articles.

1. Cutting-edge terahertz technology

2. Photonic analog-to-digital converters

3. Semiconductors for terahertz photonics applications

4. Picosecond GaAs‐based photoconductive optoelectronic detectors

5. New MBE buffer used to eliminate backgating in GaAs MESFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of a Millimeter-Long Travelling Wave THz Photomixer;Journal of Lightwave Technology;2021-07

2. InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current;Applied Physics Letters;2019-04-22

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