InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current
Author:
Affiliation:
1. Institut d'Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Université de Lille, Avenue Poincaré, B.P. 60069, 59652 Villeneuve d'Ascq Cedex, France
Funder
Direction Générale de l'Armement
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5092283
Reference29 articles.
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1. High-Speed 1550 nm Photoconductive Detector With Plasmonic Micro-Grating Electrodes;IEEE Photonics Technology Letters;2024-06-01
2. InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation;Results in Optics;2023-12
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