Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102655
Reference6 articles.
1. Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
2. Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates
3. Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy
4. Stimulated emission in semiconductor quantum wire heterostructures
5. Morphology of GaAs and InP (001) Substrates after Different Preparation Procedures Prior to Epitaxial Growth
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1. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05
2. Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates;Materials Science-Poland;2016-11-06
3. Chemical composition of InxGa1−xAs epilayers grown simultaneously on differently oriented GaAs substrates;Journal of Crystal Growth;2001-03
4. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
5. Size effects on the growth mode and roughness of sub-micron structures grown by selective area epitaxy;Brazilian Journal of Physics;1999-12
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