Effect of plasma treatment on the density of defects at an amorphous Si:H-insulator interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368249
Reference26 articles.
1. Interface state density of SiNX:H/c-Si MIS structure
2. Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy
3. Investigation of Surface Passivation Effect of $\bf a\mbox{-}SiN_{\ninmbi x}:H$ on a-Si:H by Photothermal Deflection Spectroscopy
4. Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments
5. Comparative study of the optical absorption spectra of amorphous hydrogenated silicon derived from photothermal deflection spectroscopy and photoconductivity measurements
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1. Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors;Flexible Electronics;2009
2. Low-Temperature Materials and Thin Film Transistors for Flexible Electronics;Proceedings of the IEEE;2005-08
3. Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer;IEEE Transactions on Electron Devices;2001-04
4. Electronic band structure of insulating hydrogenated carbon-germanium films;Journal of Applied Physics;1999-10-15
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