Migration of Si in molecular‐beam epitaxial growth of δ‐doped GaAs and Al0.25Ga0.75As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346299
Reference12 articles.
1. DC and AC characteristics of delta-doped GaAs FET
2. Delta‐doped ohmic contacts ton‐GaAs
3. Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
4. Diffusion and drift of Si dopants in δ‐dopedn‐type AlxGa1−xAs
5. Post-growth diffusion of Si in delta -doped GaAs grown by MBE
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