Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4837996
Reference37 articles.
1. Silicon Carbide
2. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
3. Radiation-induced defect centers in 4H silicon carbide
4. Deep level defects in electron-irradiated 4H SiC epitaxial layers
5. Electrically active point defects in n-type 4H–SiC
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