[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications-Reference-Cited by-同舟云学术

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[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

Published:2016-03-28 Issue:13 Volume:108 Page:132405
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu E.,Swerts J.,Couet S.,Mertens S.,Tomczak Y.,Lin T.,Spampinato V.,Franquet A.,Van Elshocht S.,Kar G.,Furnemont A.,De Boeck J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945089

Reference27 articles.

1. Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions

4. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure

5. Prediction and confirmation of perpendicular magnetic anisotropy in Co/Ni multilayers

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