Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect-Reference-Cited by-同舟云学术

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Published:2022-11-09 Issue:1 Volume:9 Page:2200987
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Song Yuhang¹²^ORCID,Dai Zhiming³,Liu Long¹,Wu Jinxiang¹²,Li Tingting¹²,Zhao Xiaotian¹,Liu Wei¹^ORCID,Zhang Zhidong¹

Affiliation:

1. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 P. R. China

2. School of Materials Science and Engineering University of Science and Technology of China Shenyang 110016 P. R. China

3. Department of Physics and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems Huaiyin Normal University Huai'an 223300 P. R. China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200987

Reference54 articles.

1. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure

4. All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures

5. Spin-orbit torques: Materials, physics, and devices

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