Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)-Reference-Cited by-同舟云学术

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Published:2020-01-07 Issue:1 Volume:127 Page:015306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Budde Melanie¹^ORCID,Remmele Thilo²,Tschammer Carsten¹,Feldl Johannes¹,Franz Philipp¹,Lähnemann Jonas¹^ORCID,Cheng Zongzhe¹^ORCID,Hanke Michael¹,Ramsteiner Manfred¹^ORCID,Albrecht Martin²^ORCID,Bierwagen Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

2. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Funder

Leibniz-Gemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5129881

Reference37 articles.

1. UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

2. Dielectric Properties of Cobalt Oxide, Nickel Oxide, and Their Mixed Crystals

3. Electronic and transport properties of Li-doped NiO epitaxial thin films

4. Character of the insulating state in NiO: A mixture of charge-transfer and Mott-Hubbard character

5. Noncubic Behavior of Antiferromagnetic Transition-Metal Monoxides with the Rocksalt Structure

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