On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field-Reference-Cited by-同舟云学术

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

Published:2019-08 Issue:8 Volume:9 Page:085004
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Rodrigues Isabel Harrysson¹^ORCID,Niepce David²^ORCID,Pourkabirian Arsalan³,Moschetti Giuseppe³,Schleeh Joel³,Bauch Thilo⁴,Grahn Jan¹^ORCID

Affiliation:

1. GigaHertz Centre, Department of Microtechnology and Nanoscience - MC2, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

2. Quantum Technology Laboratory, Department of Microtechnology and Nanoscience - MC2, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

3. Low Noise Factory AB, Nellickevägen 22, SE-41663 Gothenburg, Sweden

4. Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience - MC2, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

Funder

GigaHertz Centre

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5107493

Reference10 articles.

1. A Low-Noise Broadband Cryogenic Preamplifier Operated in a High-Field Superconducting Magnet

2. Results from a search for cosmic axions

3. Cryogenic Preamplifiers for Magnetic Resonance Imaging

4. Cryogenic Broadband Ultra-Low-Noise MMIC LNAs for Radio Astronomy Applications

5. Effect of high magnetic fields on the noise temperature of a heterostructure field-effect transistor low-noise amplifier

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