Thermal characterization and analysis of phase change random access memory-Reference-Cited by-同舟云学术

Thermal characterization and analysis of phase change random access memory

Published:2005-07 Issue:1 Volume:98 Page:013520
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Giraud V.,Cluzel J.,Sousa V.,Jacquot A.,Dauscher A.,Lenoir B.,Scherrer H.,Romer S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1944910

Reference24 articles.

1. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)

2. M. H.R. Lankhorst, R. A.M. Wolters, E. R. Meinders, and L. van Pietersen, in Proceedings of the Semicon Europa Conference, Munich, Germany, 1–3 April 2003, (unpublished), pp. 5–19.

3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

4. Phase-Change Optical Disk Having a Nitride Interface Layer

5. Nanometer-Scale Erasable Recording Using Atomic Force Microscope on Phase Change Media

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