Influence of tensile and compressive strain on the band gap energy of ordered InGaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1413725
Reference13 articles.
1. Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells
2. Heterojunction band offsets and effective masses in III-V quaternary alloys
3. Influence of domain size on optical properties of ordered GaInP2
4. Optical determination of growth variants in ordered GaInP
5. Transport anisotropy in spontaneously ordered GaInP2 alloys
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3. First principle study of electronic nanoscale structure of In x Ga1−x P with variable size, shape and alloying percentage;Indian Journal of Physics;2013-06-21
4. Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1−xP/GaAs structure;Journal of Materials Science: Materials in Electronics;2012-10-23
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