Optical determination of growth variants in ordered GaInP-Reference-Cited by-同舟云学术

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Optical determination of growth variants in ordered GaInP

Published:1997-03 Issue:10 Volume:101 Page:757-760
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Alsina F.,Garriga M.,Alonso M.I.,Tortosa S.,Pascual J.,Geng C.,Scholz F.,Glew R.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. Polarized band-edge photoluminescence and ordering inGa0.52In0.48P

2. Proceedings of the 22nd International Conference on the Physics of Semiconductors;Alsina,1995

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3. Effect of strain and ordering on the band-gap energy of InGaP;Materials Science and Engineering: B;2002-01

4. The Physics of Tunable Disorder in Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002

5. Atomic Ordering and its Influence on the Optical and Electrical Properties of InGaP Grown by MOVPE;Atomistic Aspects of Epitaxial Growth;2002

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