Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration-Reference-Cited by-同舟云学术

Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration

Published:1994-02-28 Issue:9 Volume:64 Page:1135-1137
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yung K.,Yee J.,Koo J.,Rubin M.,Newman N.,Ross J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.110830

Reference6 articles.

1. GaN, AlN, and InN: A review

2. Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

3. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

4. Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition

5. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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1. Optical properties of highly excited (Al, In) GaN epilayers and heterostructures;Handbook of Thin Films;2002

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3. Design of InGaN-GaN-AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation;IEEE Journal of Selected Topics in Quantum Electronics;2001

4. Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation;SPIE Proceedings;2000-07-14

5. Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method;Physics and Simulation of Optoelectronic Devices VII;1999-08-06