Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics
Author:
Affiliation:
1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
3. Harvard University, Cambridge, Massachusetts 02139, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4905180
Reference27 articles.
1. Binary copper oxide semiconductors: From materials towards devices
2. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
3. Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells
4. Interface stoichiometry control to improve device voltage and modify band alignment in ZnO/Cu2O heterojunction solar cells
5. Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
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