Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
Author:
Affiliation:
1. Massachusetts Institute of Technology; Cambridge Massachusetts 02139 USA
2. Department of Chemistry and Chemical Biology; Harvard University; Cambridge Massachusetts 02138 USA
3. National Renewable Energy Laboratory; Golden, Colorado 80401 USA
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201401054/fullpdf
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